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Dipartimento di Fisica e Scienze della Terra

Publications 2017

  • I. Cora, F. Mezzadri, F. Boschi, M. Bosi, M. Caplovicova, G. Calestani, I. Dódony, B. Pécz, R. Fornari: “Real structure of e-Ga2O3 and its relation to kphase”, Cryst. Eng. Comm. 19 (2017) 1509 DOI: 10.1039/c7ce00123a
  • Nicholas Cavallari, Francesco Pattini , Stefano Rampino, Filippo Annoni, Mario Barozzi, Matteo Bronzoni Edmondo Gilioli, Enos Gombia, Carlo Maragliano, Massimo Mazzer, Giancarlo Pepponi, Giulia Spaggiari, Roberto Fornari, “Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts”, Appl. Surf. Sci. 412 (2017) 52-57, http://dx.doi.org/10.1016/j.apsusc.2017.03.242
  • A. Parisini, A. Parisini, R. Nipoti, "Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC", Journal of Physics Condensed Matter, 29 (2017) 035703 DOI: 10.1088/1361-648X/29/3/035703

 

Publications 2016

  • A. Parisini and R. Fornari: “Analysis of the scattering mechanisms controlling the electron mobility in β-Ga2O3 crystals”, Semicond. Sci, Technol. 31 (2016) 035023
  • F.Boschi, M.Bosi, T.Berzina, E.Buffagni, C.Ferrari, R.Fornari: “ Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD”, J. Crystal Growth 443 (2016) 25–30; DOI  10.1016/j.jcrysgro.2016.03.013
  • Francesco Mezzadri, Gianluca Calestani, Francesco Boschi, Davide Delmonte, Matteo Bosi, Roberto Fornari: “Crystal Structure and Ferroelectric Properties of ε‑Ga2O3 Films Grown on (0001)-Sapphire”, Inorg. Chem. (2016) 12079-12084, DOI: 10.1021/acs.inorgchem.6b02244
  • F. Ricci, F. Boschi, A. Baraldi, A. Filippetti, M. Higashiwaki, A. Kuramata, V. Fiorentini and R. Fornari: “Theoretical and experimental investigation of absorption anisotropy in b-Ga2O3”, J. Phys.: Cond. Matt. 28 (2016) 224005; DOI  10.1088/0953-8984/28/22/224005
  • A. Cifarelli, T. Berzina, A. Parisini, V. Erokhin, A. Iannotta, "Polysaccarides-based gels and solid-state electronic devices with memresistive properties: Synergy between polyaniline electrochemistry and biology" AIP Advances, 6 (2016) 111302 DOI: 10.1063/1.4966559

  • A. Parisini, A. Parisini, M. Gorni, R. Nipoti, "High temperature variable range hopping in heavy Al implanted 4H-SiC" Materials Science Forum, 858 (2016) 283 DOI: 10.4028/www.scientific.net/MSF.858.283

  • R. Nipoti, A. Parisini, G.Sozzi, M. Puzzanghera, A. Parisini, A. Carnera, "Structural and functional characterizations of Al+ implanted 4H-SiC layers and Al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing" ECS Journal of Solid State Science and Technology, 5 (2016) P621 DOI: 10.1149/2.0211610jss

  • P. Fedeli, M. Gorni, A. Carnera, A. Parisini, G. Alfieri, U. Grossner, R. Nipoti, "1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time" ECS Journal of Solid State Science and Technology, 5 (2016) 9) P534 DOI: 10.1149/2.0361609jss

  • R. Nipoti, A. Parisini, G. Sozzi, M. Puzzanghera, A. Parisini, A. Carnera, "4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing" ECS Transactions, 75 (2016) 171 DOI: 10.1149/07512.0171ecst

  • R. Nipoti, A. Parisini, S. Vantaggio, G. Alfieri, A. Carnera, E. Centurioni, I. Elmi, U. Grossner, "1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time" Materials Science Forum, 858 (2016) 523 DOI: 10.4028/www.scientific.net/MSF.858.523

 

 

Publications 2015

  • F. Orlandi, F. Mezzadri, G. Calestani, F. Boschi and R. Fornari: “Thermal expansion coefficients of b-Ga2O3 single crystals”, Appl. Phys. Express 8 (2015) 111101, DOI 10.7567/APEX.8.111101
  • R. Fornari: “Epitaxy for energy materials”, in Handbook of Crystal Growth; Vol. III, Eds. T. Kuech, T. Nishinaga and P. Rudolph, Elsevier Science, Oxford 2015, ISBN: 9780444633040, p. 1 – 49
  • A. Parisini, R. Nipoti, "About the hole transport analysis in heavy doped p-type 4H-SiC(Al) Materials Science Forum, 821-823 (2015) pp. 416 DOI: 10.4028/www.scientific.net/MSF.821-823.416

  • A. Parisini, M. Gorni, A. Nath, L. Belsito, M.V. Rao, R. Nipoti, "Remarks on the room temperature impurity band conduction in heavily Al<sup>+</sup> implanted 4H-SiC" Journal of Applied Physics, 118 (2015) 035101 DOI: 10.1063/1.4926751

  • R. Nipoti, A. Parisini, A. Carnera, C. Albonetti, S Vantaggio, U. Grossner, "Al+ ion implanted on-axis <0001>semi-insulating 4H-SiC" Materials Science Forum, 821-823 (2015) 399 DOI: 10.4028/www.scientific.net/MSF.821-823.399

 

Publications 2014

  • K. Irmscher, M. Naumann, M. Pietsch, Z. Galazka, R. Uecker, T. Schulz, R. Schewski, M. Albrecht and R. Fornari: “On the nature and temperature dependence of the fundamental bandgap of In2O3”, Phys. Stat. Sol. A211 (2014) 54-58; DOI 10.1002/pssa.201330184
  • Zbigniew Galazka, Reinhard Uecker, Detlef Klimm, Klaus Irmscher, Mike Pietsch, Robert Schewski, Martin Albrecht, Albert Kwasniewski, Steffen Ganschow, Detlev Schulz, Christo Guguschev, Rainer Bertram, Matthias Bickermann, and Roberto Fornari: „Growth, characterization, and properties of bulk SnO2 single crystals“, Phys. Stat. Sol. A211 (2014) 66-73; DOI 10.1002/pssa.201330020
  • Guenter Wagner, Michele Baldini, Daniela Gogova, Martin Schmidbauer, Robert Schewski,Martin Albrecht, Zbigniew Galazka, Detlef Klimm and Roberto Fornari: „Epitaxial growth of beta Ga2O3 by metal organic vapour phase epitaxy“, Phys. Stat. Sol. A211 (2014) 27-33; DOI 10.1002/pssa.201330092
  •  Dorothee Braun, Valentina Scherer, Christoph Janowitz, Zbigniew Galazka, Roberto Fornari and Recardo Manzke: „In-gap states of In2O3 single crystals investigated by Scanning Tunnel Spectroscopy“, Phys. Stat. Sol. A211 (2014) 59-65; DOI 10.1002/pssa.201330089
  •  Zbigniew Galazka, Reinhard Uecker and Roberto Fornari: “A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method”, J. Crystal Growth388 (2014) 61-69; DOI 10.1016/j.jcrysgro.2013.11.049
  •  M. Albrecht, R.Schewski, K. Irmscher, Z. Galazka, T. Markurt, M. Naumann, T. Schulz, R. Uecker, R. Fornari, S.Meuret, M.Kociak: “Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering – A case study on indium oxide”, J. Appl. Phys. 115 (2014) 053504;
  • Wan Sik Hwang, Amit Verma, Hartwin Peelaers, Vladimir Protasenko, Sergei Rouvimov, Huili Xing, Alan Seabaugh, Wilfried Haensch, Chris Van de Walle, Zbigniew Galazka, Martin Albrecht, Roberto Fornari, and Debdeep Jena: “High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes”, Appl.Phys.lett. 104 (2014) 203111http://dx.doi.org/10.1063/1.4879800
  • Andrea Santi, Massimiliano Zanichelli, Giovanni Piacentini, Maura Pavesi, Adriano Cola, and Isabella Farella: “An original method to evaluate the transport parameters and reconstruct the electric field in solid-state photodetectors”,  Appl. Phys. Lett. 104(19), (2014) 193503 http://dx.doi.org/10.1063/1.4876178
  • Andrea Zappettini, Nicola Zambelli, Giacomo Benassi, Davide Calestani, and Maura Pavesi: “Live-monitoring Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals”, Appl. Phys. Lett. 104(25), (2014) 252105 http://dx.doi.org/10.1063/1.4885116
  • A. Nath, Mulpuri V. Rao, Y-L- Tian,  A. Parisini and R. Nipoti: "Microwave annealing of high dose Al+ implanted 4H-SiC: towards device fabrication", J. Electr. Mater. 43(4) 843-849 (2014); doi: 10.1007/s11664-013-2973-5
  • A. Nath, A. Parisini, Y-L- Tian, Mulpuri V. Rao and R. Nipoti: "Microwave annealing of Al+ implanted 4H-SiC: towards device fabrication", Mater. Sci. Forum 778-780 653-656 (2014); doi:10.4028/www.scientific.net/MSF.778-780.653, proceedings of the ICSCRM2013, Miyazaki, September 29 - October 4, 2013
  • M. Gorni, A. Parisini, E. Gombia, M. Baldini, S. Vantaggio and C. Ghezzi: "Electrical Characterization of a Buried GaSb p-n Junction Controlled by Native Defects", Cryst. Res. Technol. 49(8) 628–633 (2014); DOI:10.1002/crat.201300411